cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 1/7 MTB06N03J3 cystek product specification n-channel enhancement mode power mosfet bv dss 30v MTB06N03J3 i d 80a r ds(on) 6m features ? 100% uis testing, @v d =15v, l=0.1mh, v g =10v, i l =40v, rated v ds =25v n-ch ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package & halogen-free package symbol outline MTB06N03J3 to-252 absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 80 continuous drain current @ t c =100c i d 50 pulsed drain current (note 1) i dm 170 avalanche current i as 53 a avalanche energy @ l=0.1mh, i d =53a, r g =25 e as 140 repetitive avalanche energy@ l=0.05mh (note 2) e ar 40 mj total power dissipation @ t c =25 83 total power dissipation @ t c =100 pd 45 w operating junction and storage temp erature range tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% g gate g d s d drain s source
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 2/7 MTB06N03J3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.8 c/w thermal resistance, junction-to-ambient, max r th,j-a 75 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a v gs(th) 1 1.5 3 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0v - - 1 v ds =24v, v gs =0v i dss - - 25 a v ds =20v, v gs =0v, tj=125 c *i d(on) 80 - - a v ds =10v, v gs =10v - 5.3 6 v gs =10v, i d =30a *r ds(on) - 7.6 9.5 m v gs =5v, i d =24a *g fs - 25 - s v ds =5v, i d =24a dynamic *qg(v gs =10v) - 53 - *qg(v gs =5v) - 30 - *qgs - 8 - *qgd - 17 - nc i d =30a, v ds =15v, v gs =10v *t d(on) - 22 - *tr - 16 - *t d(off) - 65 - *t f - 10 - ns v ds =15v, i d =25a, v gs =10v, r gs =2.7 ciss - 4753 - coss - 495 - crss - 348 - pf v gs =0v, v ds =15v, f=1mhz rg - 1.2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 80 *i sm - - 170 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 32 - ns *qrr - 12 - nc i f =i s , v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTB06N03J3 to-252 (rohs compliant & halogen-free) 2500 pcs / tape & reel b06n03
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 3/7 MTB06N03J3 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 4/7 MTB06N03J3 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 5/7 MTB06N03J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 6/7 MTB06N03J3 cystek product specification recommended wave soldering condition product soldering time peak temperature pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. time 25 c to peak temperature 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c441j3 issued date : 2009.03.02 revised date : page no. : 7/7 MTB06N03J3 cystek product specification to-252 dimension marking: b a c e h i j k 3 2 1 d f g l date code device name style: pin 1.gate 2.drain 3.source 3-lead to-252 plastic surface mount package cystek package code: j3 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0177 0.0217 0.45 0.55 g 0.0866 0.1102 2.20 2.80 b 0.0650 0.0768 1.65 1.95 h - *0.0906 - *2.30 c 0.0354 0.0591 0.90 1.50 i - 0.0449 - 1.14 d 0.0177 0.0236 0.45 0.60 j - 0.0346 - 0.88 e 0.2441 0.2677 6.20 6.80 k 0.2047 0.2165 5.20 5.50 f 0.2125 0.2283 5.40 5.80 l 0.0551 0.0630 1.40 1.60 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : kfc; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
